MTP3055V transistor equivalent, n-channel enhancement mode field effect transistor.
12 A, 60 V. RDS(ON) = 0.150 Ω @ VGS = 10 V Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the.
i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower gate charge than other MO.
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